Advanced Interconnects for Heterogeneous Integration of GaN and GaAs RF MMICs

Conventional methods of functional integration of RF MMICs are insufficient to meet the emerging military and commercial needs of compact, high frequency modules consisting of heterogeneous technologies. These needs with aggressive size, weight, and power (SWaP) targets are pushing the development of advanced packaging architectures of 2.5D and 3D integration for GaN and GaAs RF MMICs. Advanced interconnect features that can allow wire-bond-free and compliant 2.5D and 3D integration are the key enablers to use these packaging schemes to the greatest extent. This presentation will review historical as well as recent development of such advanced interconnect features including pillar bumps and hot vias for GaAs and GaN RF MMICs for mm-wave applications. Design considerations and fabrication aspects along with the highlights of Qorvo’s results of such features will be presented.