InP-on-BiCMOS Hetero-Integration for 100GHz and Beyond

The talk will review work on hetero-integrating InP-HBT circuits with SiGe-BiCMOS for the frequency range from 100GHz up to 300GHz, which has been pursued in a collaboration between the two German research institutes FBH and IHP. Two different technical approaches will be presented, based on BCB wafer-bonding and chiplet integration. Circuit results of InP-on-SiGe-BiCMOS MMICs include frequency sources and upconverters up to 330GHz.