3D Chip-Level Broadband Measurement Technique for Radiated EM Emission

This paper proposes a novel broadband 3D chip-level radiated EM emission measurement technique. Two different test carriers with the embedded CPW and coil conductors respectively are designed and realized by the integrated passive device (IPD) process, which allow collecting the EM emission via near-field coupling. Using an in-house designed 0.18-┬Ám CMOS VCO as the DUT, the emission spectrum obtained using the CPW conductor demonstrates a broadband characteristic up to above 20 GHz with an excellent agreement of the direct measurements. Compared to the traditional IEC standard approaches typically limited below 3 GHz, the proposed high sensitivity and broadband technique is suitable for evaluating EM interference of high-frequency ICs in advanced 3D packaging.