InGaAs mHEMTs: Technology and Circuit Aspects for mm-Wave and THz Applications
InGaAs-based HEMTs are known for the best noise performance in the field of semiconductor technologies. At the beginning, this talk gives an overview about state-of-the-art low-noise amplifiers and technology aspects. Afterwards, the generation of RF power and corresponding topologies at mm-wave and sub-mm-wave frequencies is discussed with special emphasis on distributed approaches. At the end, the talk demonstrates results in the field of space applications, high frequency communication, and sensing.