Measuring GaN HEMT Performance Degradation Under Nonlinear Dynamic Operation
The development of state-of-the-art microwave devices is a challenging task, especially nowadays when highly demanding applications are required by the upcoming 5G-related systems. The proper evaluation of device performance degradation and robustness is crucial to guarantee reliability and continuous improvements of the overall system. In this talk, the importance of measuring the performance degradation of microwave GaN HEMTs under actual load-line conditions is discussed with particular emphasis on the characterization technique adopted, which empowers one to gather information commonly hidden when standard DC stress tests are performed. The benefits of using nonlinear characterization techniques for assessing microwave device degradation are highlighted giving some practical examples on state-of-the-art GaN technologies.