Scalable Nonlinear RF Modeling of GaN HEMTs with Industry Standard ASM HEMT Compact Model

This talk is divided into two parts. First part will discuss the industry standard ASM HEMT compact model. Core and numerous device effects included in this model will be discussed. Accurate non-linear RF modeling of several GaN technologies covering multiple voltage and frequency ranges. Design success with this model for Ka-band power amplifiers will be presented. Second part of the talk will cover new developments in the ASM HEMT model including computationally efficient field plate modeling, modeling of dynamic trapping effects, and extension of ASM HEMT model to advanced GaN device architectures. This talk will also show examples of using the ASM HEMT model for insightful analysis of non-linearities of GaN HEMT for device-circuit co-optimization.