Nonlinear RF modeling of GaN HEMTs with Fermi kinetics transport and the ASM-HEMT compact model

Rapid design and prototyping of next-generation microwave and mm-wave GaN technology requires reliable and accurate models. A paramount component of enabling first-pass design success of GaN microwave power amplifiers is the ability to model process variations inherent in GaN foundries. This talk will focus on the recent development of a statistical nonlinear ASM-HEMT model guided by the AFRL TCAD solver called Fermi kinetics transport (FKT). The FKT simulations will enable exact control of process variations in the GaN HEMT and will shed light on statistical nonlinear modeling of GaN microwave technology.