A Novel High Power Plastic Quad Flat No-Lead Package Structure for RF GaN Applications
In this paper, a new type plastic quad flat no-lead (QFN) package for GaN high electron mobility transistor (HEMT) related applications is proposed. By using the low input impedance structure, the proposed package can achieve wider bandwidth. Also, the reliability of integrated passive device (IPD) in the package is well considered. With the benefits of the small package size and low cost, the proposed package is suitable for next generation GaN RF commercial applications. Besides, by using 0.25µm GaN on SiC HEMT, a single stage 2.5 GHz PA module is also implemented to demonstrate the performance of the proposed package. The continue wave (CW) mode measurement small signal gain is 13.1 dB at 2.5 GHz. For RF pulse mode large signal measurement, the saturation power (Psat) is over 37.5 dBm at 2.14 GHz and the power added efficiency (PAE) can reach over 39 percent.