TaOx Resistive Switching Phenomena; Physical Properties and Device Applications

Resistive switching-based radio frequency (RF) devices have the potential to overcome the leakage / high-voltage / reliability tradeoff in today’s state-of-the-art RF switches, while maintaining low insertion loss. Previous research on RF resistive switching devices has focused on phase change materials (PCM) and conductive bridge (CB) material systems, but vacancy mediated (VM) resistive switching devices are largely unstudied for high frequency applications. An initial report on an RF switch using a titanium dioxide vacancy mediated resistive switching device shows promise due to highspeed switching and low insertion loss but suffers from low cycling endurance (~20 cycles) and a 2.8THz Figure of Merit (FOM). Cycling endurance is a challenge faced in multiple domains, and a rich body of literature exists in the memory space to help guide investigations. Industry focus on vacancy mediated resistive switching has shifted to the TaOx material system as cycling endurance of 10e12 cycles has been demonstrated. Understanding the physical properties of the resistive switching mechanism can help inform device design and tune programming schemes to mediate tradeoffs and achieve high performance RF switches that are robust and reliable.