Design and Analysis of SPDT Switch and Array Antenna for 28 GHz 5G New Radio

We report a low-insertion-loss (IL), high-isolation, and high-linearity CMOS SPDT switch and a 4×4 array antenna for 28 GHz 5G NR. The TX path consists a parallel DTMOS transistor M1 with a large R (DTMOS-R), a series 1/8-wavelength TL, and a parallel Cant. The 1/8-wavelength-TL in conjunction with the parallel Cant and parasitic capacitance of M1/M2 constitute an equivalent 1/4-wavelength-TL with ZC of 50 ohm. This leads to low IL in TX mode and decent isolation in RX mode. The RX path constitutes a series impedance and a parallel DTMOS-R M3. This leads to high linearity in RX mode and decent isolation in TX mode. In TX mode, the SPDT switch achieves measured IL of 0.58-1 dB and isolation of 25.6-62.3 dB for 17-34.9 GHz, and P1dB of 28.5 dBm. The antenna achieves S11 smaller -10 dB for 28.5-31.1 GHz, and decent gain of 10.1 dB at 30 GHz.