III-V HBT Reliability Related Device Physics

III-V Heterojunction Bipolar Technologies (InP and GaAs) have very different operating limitations (for reliability and ruggedness) compared to SiGe HBTs. These different limitations arise from differences in the device physics, device design, and the primary application being power amplifiers. In this talk, we will contrast the wear-out and ruggedness mechanisms of III-V transistors to those of SiGe. We will also discuss and compare some of the device level parameters (that result from device design) that also impact the overall robustness of the devices in power amplifier circuits.