High Efficiency D-Band Multi-Way Power Combined Amplifiers in 45nm CMOS RFSOI

In recent years, silicon-based mm-wave and sub-THz systems operating in the D-band frequency spectrum have become of increasing interest due to emerging applications. Power amplifiers (PAs) are one of the most important and challenging blocks in the transmitter designs. Compared to III-V or SiGe processes, the breakdown voltage of the MOS transistors is low and this limits the transistors linearity and maximum output power. Therefore, in this work, a multi-way ultra-low loss power combining technique is analyzed and implemented to deliver higher output powers with high efficiency in CMOS PAs. These PAs achieve up to 17.5–19dBm Psat and 14.2–12.1% peak PAE, respectively, which break the CMOS performance records.