Statistical Modeling of Manufacturing Variability in GaN HEMT I-V Characteristics with ASM-HEMT
In this paper, a statistical simulation model for variability in I-V characteristics of GaN-HEMTs due to the manufacturing process variations is presented. The variability in I-V characteristics is found to depend on changes in device geometry and device physics parameters caused by manufacturing process variations. This paper presents a systematic methodology to model these variations. Using physics-based formulations of the industry standard ASM-HEMT model and developed methodology, the effects of manufacturing variations on I-V are accurately modeled for the first time. The model has been validated for 114 GaN HEMTs processed at a standard GaN foundry. The developed simulation model is used to analyze the impact of variations on P1dB. This model lays the foundations for yield analysis in GaN HEMT technologies.