Heterogeneous GaN and RFSOI Technology: Device and Circuits

To address the increasingly challenging requirements of the RF front-end (RFFE) for 5G and also anticipated requirements for 6G, the 3D heterogeneous integration of GaN HEMT on a RF-SOI technology is sought for combining technology strengths: a high performance RF component and a capable Si based platform. A 130nm RF-SOI includes RF passives, analogue, digital, and I/O functionality while the GaN HEMT is selectively instantiated and exploited for linearity, power density, or high efficiency. Several examples of device performance and reference designs will be presented using a 200nm based foundry process.