Experimental Characterization of Temperature-Dependent Microwave Noise of Discrete HEMTs: Drain Noise and Real-Space Transfer

We report wafer characterization of the S-parameters and microwave noise temperature of discrete GaAs and GaN HEMTs over a temperature range of 20–300 K. The measured noise temperature (T50) exhibits a dependence on physical temperature that is inconsistent with a constant drain temperature, with Td for the GaAs and GaN devices changing from ~ 2000 K and ~ 2800 K at room temperature to ~ 700 K and ~ 1800 K at cryogenic temperatures, respectively. The observed temperature dependence is qualitatively consistent with that predicted from a theory of drain noise based on real-space transfer of electrons from the channel to the barrier.