Off-State Stability of Phase-Change Material RF-Switches
This paper presents experimental results on the Off-State stability in indirectly heated GeTe RF switches. The time before GeTe recrystallization is different between devices fabricated in Off-state and turned-off switches. The effect of post fabrication thermal annealing on the Off-State stability is shown, as well as the strong temperature dependence of the time before the GeTe recrystallization occurs. Off-State could be maintained up to 7 Hours at 95°C, without significant degradation of the switch.