Compact Transistor Modeling for Microwave and mm-Wave GaN Power Amplifier Design

In this presentation we present an approach for the development of a compact nonlinear model for use in the design of discrete and MMIC GaN power amplifiers for microwave and mm-wave applications. The compact model should use current and charge state functions modeled with continuously-differentiable functions, be fully charge conservative, cover the complete current-voltage and charge-voltage space, include dynamical models for thermal effects and trapping, and provide size scalability. Speed of simulation and convergence are vitally important concerns; these aspects need to be addressed in the detailed formulation of the algebraic functions used in the model.