100nm to 40nm GaN-on-Si for mm-Wave Application

We will present in this workshop a GaN process dedicated to microwave and mm-wave MMICs, thanks to the special structure of the active layer and of the ohmic contacts, compatible with short gate length (100nm, 60nm and 40nm). In addition, this process is built on Silicon substrate, allowing larger diameter, lower cost and compatibility with heterogeneous integration. The possibility of E/D functions allows easier control of multi function MMICs.