Emerging Millimeter-Wave Device Technology — Next Generation GaN and Beyond

Future sensor and communication systems require higher performance (higher power, dynamic range and efficiency, wider bandwidths) to meet system requirements in increasingly congested electromagnetic (EM) environments. One solution is operation at millimeter-wave frequencies; however, the performance of existing RF transistor technologies and their resulting millimeter-wave circuits is inadequate. To overcome these limitations the DARPA Dynamic-Range Enhanced Electronics and Materials (DREaM) program is developing advanced high-power and high-dynamic-range, millimeter-wave transistor technology, by combining innovations in epitaxial materials, device structures, and/or fabrication processes.