Active Components

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Marc Franco
QORVO, Inc.
Robert Caverly
Villanova Univ.
Location
408A
Abstract

This session presents the latest developments in high-power technology for HF, VHF, UHF and S band. The techniques include amplifiers based upon a novel serial combiner and a broadband transmission-line combiner. Also included are a kilowatt 27 MHz amplifier with supply modulation and an amplifier based upon new high-voltage GaN FETs. Finally, an S-band magnetron that produces 20 kW of power will be presented.

Abstract
Tu1F-1: Series-Combined Coaxial Dielectric Resonator Class-F Power Amplifier System
Ramon Beltran, Feiyu Wang, Greg Villagrana
Ramon Beltran, OPHIR RF Inc.
(08:00 - 08:20) 2020-06-23
Abstract
Tu1F-2: An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique
Yoshitaka Niida, Masaru Sato, Masato Nishimori, Toshihiro Ohki, Norikazu Nakamura
Yoshitaka Niida, Fujitsu Labs Ltd.
(08:20 - 08:40) 2020-06-23
Abstract
Tu1F-3: Compact and Highly Efficient Lumped Push-pull Power Amplifier at Kilowatt level with Quasi-static Drain Supply Modulation
Renbin Tong, Dragos Dancila
Renbin Tong, Uppsala Univ.
(08:40 - 09:00) 2020-06-23
Abstract
Tu1F-4: A 2.3 kW 80% Efficiency Single GaN Transistor Amplifier for 400.8 MHz Particle Accelerators and UHF Radar Systems
Gabriele Formicone, James Custer
Gabriele Formicone, Integra Technologies, Inc.
(09:00 - 09:20) 2020-06-23
Abstract
Tu1F-5: An Enhanced Large-Power S-band Injection-Locked Magnetron with Anode Voltage Ripple Inhibition
Xiaojie Chen, Xiang Zhao, Bo Yang, Naoki Shinohara, Changjun Liu
Xiaojie Chen, Sichuan Univ.
(09:20 - 09:40) 2020-06-23

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Mona Jarrahi
Univ. of California, Los Angeles
Luca Pierantoni
Univ. Politecnica delle Marche
Location
406AB
Abstract

This session gives an overview of recent advances in the areas of microwave photonics, terahertz photonics, and nanotechnology.
Specifically, new approaches for photonics-assisted nanoantennas, generation, and detection of microwave/terahertz radiation and nearfield microwave scanning microscopy are included in this session.

Abstract
Tu2E-1: High-Sensitivity Plasmonic Photoconductive Terahertz Detector Driven by a Femtosecond Ytterbium-Doped Fiber Laser
Deniz Turan, Nezih Tolga Yardimci, Mona Jarrahi
Deniz Turan, Univ. of California, Los Angeles
(10:10 - 10:30) 2020-06-23
Abstract
Tu2E-2: Terahertz Generation through Bias-free Telecommunication Compatible Photoconductive Nanoantennas over a 5 THz Radiation Bandwidth
Deniz Turan, Nezih Tolga Yardimci, Ping Keng Lu, Mona Jarrahi
Deniz Turan, Univ. of California, Los Angeles
(10:30 - 10:50) 2020-06-23
Abstract
Tu2E-3: A 63-Pixel Plasmonic Photoconductive Terahertz Focal-Plane Array
Xurong Li, Mona Jarrahi
Xurong Li, Univ. of California, Los Angeles
(10:50 - 11:00) 2020-06-23
Abstract
Tu2E-4: Operation of Near-Field Scanning Millimeter-wave Microscopy up to 67 GHz under Scanning Electron Microscopy Vision
Petr Polovodov, Didier Théron, Sophie Eliet, Christophe Boyaval, Vanessa Avramovic, Dominique deresmes, Gilles Dambrine, Kamel Haddadi
Kamel Haddadi, Univ. of Lille
(11:00 - 11:10) 2020-06-23
Abstract
Tu2E-5: Covert Photonics-Enabled Millimeter-Wave Transmitter
Elad Siman-Tov, Juan Juarez, David Coleman
Jean Kalkavage, Johns Hopkins University Applied Physics Laboratory
(11:10 - 11:30) 2020-06-23
Abstract
Tu2E-6: Microwave Photonic Self-Adaptive Bandpass Filter and its Application to a Frequency Set-on Oscillator
Georgios Charalambous, Stavros Iezekiel
Georgios Charalambous, Univ. of Cyprus
(11:30 - 11:50) 2020-06-23
Vittorio Camarchia
Politecnico di Torino
Damon Holmes
NXP Semiconductors
Location
408A
Abstract

This session presents techniques for the design and control of power amplifiers for S and C bands including a dual-band Doherty amplifier and a two-level outphasing amplifier. Additionally, techniques for the design and integration of the output filter and matching network are presented. Finally, there is an analysis of a technique for regulating the output power in the presence of a variable load.

Abstract
Tu2F-1: Optimal Supply Voltage for PA Output Power Correction under Load Varying Scenarios
Cristiano Gonçalves, Filipe Barradas, Luis Nunes, Pedro Cabral, José Pedro
Cristiano Gonçalves, Instituto De Telecomunicacoes
(10:10 - 10:30) 2020-06-23
Abstract
Tu2F-2: A 3.9-GHz-Band Outphasing Power Amplifier with Compact Combiner Based on Dual-Power-Level Design for Wide-Dynamic-Range Operation
Ryoichi Ogasawara, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo
Ryoichi Ogasawara, Univ. of Electro-Communications
(10:30 - 10:50) 2020-06-23
Abstract
Tu2F-3: Co-Designed High-Efficiency GaN Filter Power Amplifier
Jose Estrada, Pedro de Paco, Seth Johannes, Dimitra Psychogiou, Zoya Popovic
Jose Estrada, Univ. of Colorado
(10:50 - 11:10) 2020-06-23
Abstract
Tu2F-4: Integrated Filtering Class-F Power Amplifier Based on Microstrip Multimode Resonator
Liheng Zhou, Xinyu Zhou, Wing Shing Chan, Jingzhou Pang, Derek Ho
Liheng Zhou, City Univ. of Hong Kong
(11:10 - 11:30) 2020-06-23

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Pekka Kangaslahti
Jet Propulsion Lab
George Duh
BAE Systems
Location
403A
Abstract

This session focuses on state-of-the-art low-noise circuit results with applications to quantum computing, radio astronomy, and millimeter-wave communications. First, a cryogenic SiGe LNA achieving record noise performance for silicon from 4-8 GHz will be presented. Next, the first ever W-band SiGe cryogenic LNA will be described. The third talk will focus on a broadband InP HEMT cryogenic LNA covering the entire 5-35 GHz frequency range. This will be followed by the presentation of a single-chip IQ downconverter MMIC covering the full W-band. In the final talk of the session a state-of-the-art CMOS D-band LNA operating from 125.5-157 GHz will be described.

Abstract
Tu3B-1: A 1 mW Cryogenic LNA Exploiting Optimized SiGe HBTs to Achieve an Average Noise Temperature of 3.2 K from 4–8 GHz
Wei-Ting Wong, Holger Rücker, Joseph Bardin
Mohsen Hosseini, Univ. of Massachusetts, Amherst
(13:40 - 14:00) 2020-06-23
Abstract
Tu3B-2: Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier
Mikko Varonen, Nima Sheikhipoor, Bekari Gabritchidze, Kieran Cleary, Henrik Forstén, Holger Rücker, Mehmet Kaynak
Mikko Varonen, VTT Technical Research Centre of Finland Ltd
(14:00 - 14:20) 2020-06-23
Abstract
Tu3B-3: X- to Ka- Band Cryogenic LNA Module for Very Long Baseline Interferometry
Andy Fung, Lorene Samoska, James Bowen, Steven Montanez, Jacob Kooi, Melissa Soriano, Christopher Jacobs, Raju Manthena, Daniel Hoppe, Ahmed Akgiray, Richard Lai, Xiaobing Mei, Michael Barsky
Andy Fung, Jet Propulsion Lab
(14:20 - 14:40) 2020-06-23
Abstract
Tu3B-4: A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers
Fabian Thome, Erdin Ture, Arnulf Leuther, Frank Schaefer, Alessandro Navarrini, Patrice Serres, Oliver Ambacher
Fabian Thome, Fraunhofer IAF
(14:40 - 15:00) 2020-06-23
Abstract
Tu3B-5: A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
Abdelaziz Hamani, Alexandre Siligaris, Benjamin Blampey, Cedric Dehos, Jose Luis Gonzalez-Jimenez
Abdelaziz Hamani, Univ. Grenoble Alpes - CEA, LETI
(15:00 - 15:20) 2020-06-23
Christian Carlowitz
Friedrich-Alexander-Univ. Erlangen-Nürnberg
Hermann Boss
Rohde & Schwarz GmbH & Co KG
Location
403B
Abstract

This session addresses advanced mixed-signal transmitter and optical driver ICs towards 100 Gbit/s. It starts with a 100-Gbit/s 3-bit DAC for PAM signal generation, followed by two 50-Gbit/s class optical drivers for MZ modulator and VCSEL. Finally, a CMOS wideband FMCW radar transmitter is presented as well as a Ka-band phase shifter for 5G applications.

Abstract
Tu3C-1: A 3-Bit DAC With Gray Coding for 100-Gbit/s PAM Signal Generation
Vincent Riess, Paul Stärke, Mohammad Mahdi Khafaji, Corrado Carta, Frank Ellinger
Vincent Riess, Technische Univ. Dresden
(13:40 - 14:00) 2020-06-23
Abstract
Tu3C-2: A 50-Gb/s Optical Transmitter Based on Co-design of a 45-nm CMOS SOI Distributed Driver and 90-nm Silicon Photonic Mach-Zehnder Modulator
Navid Hosseinzadeh, Kelvin Fang, Luis Valenzuela, Clint Schow, James Buckwalter
Navid Hosseinzadeh, Univ. of California, Santa Barbara
(14:00 - 14:20) 2020-06-23
Abstract
Tu3C-3: A 2.85 pJ/bit, 52-Gbps NRZ VCSEL Driver with Two-Tap Feedforward Equalization
Luis Valenzuela, Hector Andrade, Navid Hosseinzadeh, Aaron Maharry, Clint Schow, James Buckwalter
Luis Valenzuela, Univ. of California, Santa Barbara
(14:20 - 14:40) 2020-06-23
Abstract
Tu3C-4: A 6.5~7.5-GHz CMOS Wideband FMCW Radar Transmitter based on Synthetic Bandwidth Technique
Hanyang SU, Siegfred Balon, Ke You Cheong, Chun-Huat Heng
Hanyang SU, National Univ. of Singapore
(14:40 - 15:00) 2020-06-23
Abstract
Tu3C-5: A 24 - 30 GHz Ultra-Compact Phase Shifter Using All-Pass Networks for 5G User Equipment
Eduardo Vilela Pinto dos Anjos, Dominique M. M.-P. Schreurs, Guy A. E. Vandenbosch, Marcel Geurts
Eduardo Vilela Pinto dos Anjos, KU Leuven
(15:00 - 15:20) 2020-06-23
Charles Campbell
QORVO, Inc.
Gayle Collins
Obsidian Microwave, LLC.
Location
408A
Abstract

New design techniques for broad/dual-band GaN and GaAs high-performance power amplifiers are presented in this session. This body of work covers DC–20 GHz with efficiencies up to and greater than 60%. Power outputs of less than one watt to over 60 Watts are demonstrated. The methodologies include non-uniform distributed amplifier design for broadband performance, dual band approaches including leveraging the bias circuit for improved performance and broadband techniques for the driver amplifier. Both MMIC and hybrid approaches are covered.

Abstract
Tu3F-1: A Compact 10W 2-20 GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Output Impedance Transformer
Michael Roberg, Manyam Pilla, Scott Schafer, Thi Ri Mya Kywe, Robert Flynt, Nguyenvu Chu
Michael Roberg, QORVO, Inc.
(13:40 - 14:00) 2020-06-23
Abstract
Tu3F-2: 2.5 to 10.0 GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA
Jun Kamioka, Masatake Hangai, Shinichi Miwa, Yoshitaka Kamo, Shintaro Shinjo
Jun Kamioka, Mitsubishi Electric Corp.
(14:00 - 14:20) 2020-06-23
Abstract
Tu3F-3: Two-Stage Concurrent X/Ku Dual-Band GaAs MMIC Power Amplifier
Philip Zurek, Zoya Popovic
Philip Zurek, Univ. of Colorado
(14:20 - 14:40) 2020-06-23
Abstract
Tu3F-4: Broadband Driver Amplifier with Voltage Offset for GaN-based Switching PAs
Thomas Hoffmann, Florian Hühn, Sergey Shevchenko, Wolfgang Heinrich
Andreas Wentzel, Ferdinand-Braun-Institut
(14:40 - 15:00) 2020-06-23
Abstract
Tu3F-5: A Dual-Mode Bias Circuit Enabled GaN Doherty Amplifier Operating in 0.85-2.05GHz and 2.4-4.2GHz
Yuji Komatsuzaki, Rui Ma, Shuichi Sakata, Keigo Nakatani, Shintaro Shinjo
Yuji Komatsuzaki, Mitsubishi Electric Corp.
(15:00 - 15:20) 2020-06-23
Patrick Fay
Univ. of Notre Dame
Tony Ivanov
US Army CERDEC
Location
409AB
Abstract

This session focuses on the latest advances in microwave semiconductor devices. Gallium Nitride transistor advancements in power, efficiency, and 3D heterogeneous integration are highlighted. In addition, sub-100nm metamorphic HEMT noise performance and emerging high power diamond-based diodes are discussed.

Abstract
Tu3H-1: Impact of Input Nonlinearity on Efficiency, Power, and Linearity Performance of GaN RF Power Amplifiers
Sagar Dhar, Tushar Sharma, Ramzi Darraji, Damon Holmes, Joseph Staudinger, Xin Zhou, Vince Mallette, Fadhel Ghannouchi
Sagar Dhar, Univ. of Calgary
(13:40 - 14:00) 2020-06-23
Abstract
Tu3H-2: High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
Kathia Harrouche, Riad Kabouche, Etienne Okada, Farid Medjdoub
Kathia Harrouche, Centre National de la Recherche Scientifique
(14:00 - 14:20) 2020-06-23
Abstract
Tu3H-3: InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration
Shireen Warnock, Chang-Lee Chen, Jeffrey Knecht, Richard Molnar, Donna-Ruth Yost, Matthew Cook, Corey Stull, Ryan Johnson, Christopher Galbraith, Jeffrey Daulton, WeiLin Hu, Gianni Pinelli, Joshua Perozek, Tomas Palacios, Beijia Zhang, Jeffrey Herd, Craig Keast
Shireen Warnock, Massachusetts Institute of Technology, Lincoln La
(14:20 - 14:40) 2020-06-23
Abstract
Tu3H-4: Noise Performance of Sub-100-nm Metamorphic HEMT Technologies
Felix Heinz, Fabian Thome, Arnulf Leuther, Oliver Ambacher
Felix Heinz, Fraunhofer IAF
(14:40 - 15:00) 2020-06-23
Abstract
Tu3H-5: High-Power RF Characterization of Diamond Schottky Barrier Diodes at X-band
Xenofon Konstantinou, Cristian Herrera-Rodriguez, Aaron Hardy, John Albrecht, Timothy Grotjohn, John Papapolymerou
Xenofon Konstantinou, Michigan State Univ.
(15:00 - 15:20) 2020-06-23

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Chinchun Meng
National Chiao Tung Univ.
Luciano Boglione
Naval Research Laboratory
Location
403A
Abstract

This session presents LNAs from C to D band: the first paper demonstrates a new gain equalization technique, the second paper addresses the frequency tunability for 5G transceivers, the third paper shows flat gain response at mm-wave, the fourth paper shows a K/Ka/V band variable gain LNA, and the last paper demonstrates a new design exploiting magnetic coupling at E band

Abstract
Tu4B-1: A 6.5-12 GHz Balanced Variable Gain Low-noise Amplifier with Frequency-Selective Non-foster Gain Equalization Technique
Huiyan Gao, Nayu Li, Min Li, Shaogang Wang, Zijiang Zhang, Yen-Cheng Kuan, Xiaopeng Yu, Zhiwei Xu
Huiyan Gao, Zhejiang Univ.
(15:50 - 16:10) 2020-06-23
Abstract
Tu4B-2: A Compact Frequency-Tunable VGA for Multi-Standard 5G Transceivers
Roee Ben Yishay, Danny Elad
Roee Ben Yishay, ON Semiconductor
(16:10 - 16:30) 2020-06-23
Abstract
Tu4B-3: A CMOS Band-pass Low Noise Amplifier with Excellent Gain Flatness for mm-wave 5G Communications
Han-Woong Choi, Sunkyu Choi, Choul-Young Kim
Han-Woong Choi, Chungnam National Univ.
(16:30 - 16:50) 2020-06-23
Abstract
Tu4B-4: A Tri (K/Ka/V)-Band Monolithic CMOS Low Noise Amplifier with Shared Signal Path and Variable Gains
Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, Rulin Huang, Kuei-Ann Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan
Chia-Jen Liang, National Chiao Tung Univ.
(16:50 - 17:10) 2020-06-23
Abstract
Tu4B-5: A 64.5-88 GHz Coupling-Concerned CMOS LNA with >10 dB Gain and 5 dB minimum NF
Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang
Kaijuan Zhang, East China Normal Univ.
(17:10 - 17:20) 2020-06-23
Nils Pohl
Ruhr Univ. Bochum
Hiroshi Okazaki
NTT DoCoMo, Inc.
Location
403B
Abstract

This session introduces recent advances in X to G band voltage controlled oscillator design techniques. It includes new design methods for octave-range multi-band oscillators, injection-locked oscillators, and wide tuning range oscillators with advanced technologies such as 16 nm FinFET and 22 nm FD-SOI.

Abstract
Tu4C-1: Octave Frequency Range Triple-band Low Phase Noise K/Ka-Band VCO with a New Dual-path Inductor
Md Aminul Hoque, Mohammad Chahardori, Pawan Agarwal, Mohammed Ali Mokri, Deukhyoun Heo
Md Aminul Hoque, Washington State Univ.
(15:50 - 16:10) 2020-06-23
Abstract
Tu4C-2: A Superharmonic Injection based G-band Quadrature VCO in CMOS
Xuan Ding, Hai Yu, Bo Yu, Zhiwei Xu, Jane Gu
Xuan Ding, Univ. of California, Davis
(16:10 - 16:30) 2020-06-23
Abstract
Tu4C-3: A Power Efficient 60-GHz Super-Regenerative Oscillator with 10 GHz Switching Rate in 22-nm FD-SOI CMOS
Ali Ferschischi, Hatem Ghaleb, Zoltán Tibenszky, Corrado Carta, Frank Ellinger
Ali Ferschischi, Technische Univ. Dresden
(16:30 - 16:50) 2020-06-23
Abstract
Tu4C-4: A 0.011-mm2 27.5-GHz VCO with transformer-coupled bandpass filter achieving –191 dBc/Hz FoM in 16-nm FinFET CMOS
Chi-Hsien Lin, Ying-Ta Lu, Hsien-Yuan Liao, Sean Chen, Alvin L. S. Loke, Tzu-Jin Yeh
Chi-Hsien Lin, Taiwan Semiconductor Manufacturing Co., Ltd.
(16:50 - 17:10) 2020-06-23
Abstract
Tu4C-5: An X-band LC VCO Using a New Boosted Active Capacitor With 53 % Tuning Range and −202.4 dBc/Hz FoMT
Pawan Agarwal, Deukhyoun Heo
Mohammad Chahardori, Washington State Univ.
(17:10 - 17:30) 2020-06-23
David Brown
BAE Systems
Mark van der Heijden
NXP Semiconductors
Location
408A
Abstract

This session presents InP and GaN broadband millimeter-wave power amplifiers up to 150 GHz. Innovations include process development, high power combining techniques, and circuit techniques.

Abstract
Tu4F-1: High Output Power Ultra-Wideband Distributed Amplifier in InP DHBT Technology Using Diamond Heat Spreader
Md Tanjil Shivan, Maruf Hossain, Ralf Doerner, Ksenia Nosaeva, Hady Yacoub, Tom Johansen, Wolfgang Heinrich, Viktor Krozer
Md Tanjil Shivan, Ferdinand-Braun-Institut
(15:50 - 16:10) 2020-06-23
Abstract
Tu4F-2: Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP
Tushar Sharma, Zheng Liu, Chandrakanth Chappidi, Hooman Saeidi, Suresh Venkatesh, Kaushik Sengupta
Tushar Sharma, NXP Semiconductors
(16:10 - 16:30) 2020-06-23
Abstract
Tu4F-3: C to V−band cascode distributed amplifier design leveraging a double gate length Gallium Nitride on Silicon process
Patrick Longhi, Sergio Colangeli, Walter Ciccognani, Lorenzo Pace, Remy LEBLANC, Ernesto Limiti
Patrick Longhi, Univ. of Rome Tor Vergata
(16:30 - 16:50) 2020-06-23
Abstract
Tu4F-4: A 20W GaN-on-Si Solid State Power Amplifier for Q-band Space Communication Systems
Rocco Giofre, Ferdinando Costanzo, Antonino Massari, Andrea Suriani, Francesco Vitulli, Ernesto Limiti
Rocco Giofre, Univ. of Rome Tor Vergata
(16:50 - 17:10) 2020-06-23
Abstract
Tu4F-5: Highly Linear & Efficient Power Spatium Combiner Amplifier with GaN HPA MMIC at Millimeter Wavelength Frequency
Soack Yoon, John Kitt, Dylan Murdock, Eric Jackson, Gamal Hegazi, Patrick Courtney
Soack Yoon, QORVO, Inc.
(17:10 - 17:30) 2020-06-23

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Theodore Reck
Virginia Diodes Inc.
Adrian Tang
Jet Propulsion Lab
Location
403B
Abstract

This session presents the latest work on transmitter components including the power amplifiers and frequency multipliers operating at mm-wave and sub-mm-wave frequencies.

Abstract
We1C-1: A 99 - 132 GHz Frequency Quadrupler with 8.5 dBm Peak Output Power and 8.8% DC-to-RF Efficiency in 130 nm BiCMOS
Kefei Wu, Muhammad Waleed Mansha, Mona Hella
Muhammad Waleed Mansha, Rensselaer Polytechnic Institute
(08:00 - 08:20) 2020-06-24
Abstract
We1C-2: A 135-183 GHz Frequency Sixtupler in 250 nm InP DHBT Process
Mingquan Bao, Thanh Ngoc Thi Do, Dan Kuylenstierna, Herbert Zirath
Mingquan Bao, Ericsson
(08:20 - 08:40) 2020-06-24
Abstract
We1C-3: Broadband and High-Gain 400-GHz InGaAs mHEMT Medium-Power Amplifier S-MMIC
Bersant Gashi, Laurenz John, Dominik Meier, Markus Rösch, Axel Tessmann, Arnulf Leuther, Hermann Massler, Michael Schlechtweg, Oliver Ambacher
Bersant Gashi, Fraunhofer Institute for Applied Solid State Physics
(08:40 - 09:00) 2020-06-24
Abstract
We1C-4: A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA -- High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT
Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran
Zach Griffith, Teledyne Scientific
(09:00 - 09:20) 2020-06-24
Abstract
We1C-5: A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology
Ahmed Ahmed, Munkyo Seo, Ali Farid, Miguel Urteaga, James Buckwalter, Mark Rodwell
Ahmed Ahmed, Univ. of California, Santa Barbara
(09:20 - 09:40) 2020-06-24

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Samet Zihir
Renesas Electronics Corp.
Herbert Zirath
Chalmers Univ. of Technology
Location
403B
Abstract

This session includes latest work covering high-data-rate wireless transceivers and receivers as well as mm-wave radars.

Abstract
We2C-1: A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer
Ibrahim Abdo, Takuya Fujimura, Tsuyoshi Miura, Korkut Tokgoz, Hiroshi Hamada, Hideyuki Nosaka, Atsushi Shirane, Kenichi Okada
Ibrahim Abdo, Tokyo Institute of Technology
(10:10 - 10:30) 2020-06-24
Abstract
We2C-2: 100 Gbps 0.8-M Wireless Link based on Fully Integrated 240 GHz IQ Transmitter and Receiver
Mohamed Eissa, Nebojsa Maletic, Eckhard Grass, Rolf Kraemer, Dietmar Kissinger, Andrea Malignaggi
Mohamed Eissa, IHP Microelectronics
(10:30 - 10:50) 2020-06-24
Abstract
We2C-3: Wireless Communication Using Fermi-level-managed Barrier Diode Receiver with J-band Waveguide-input Port
Tadao Nagatsuma, Fumiya Ayano, Keita Toichi, Li Yi, Masamichi Fujiwara, Noriko Iiyama, Junichi Kani, Hiroshi Ito
Tadao Nagatsuma, Osaka Univ.
(10:50 - 11:10) 2020-06-24
Abstract
We2C-4: A 680 GHz Direct Detection Dual-Channel Polarimetric Receiver
Caitlyn Cooke, Kevin Leong, Khanh Nguyen, Alfonso Escorcia, Gerry Mei, Jennifer Arroyo, Taylor Barton, Cornelis Du Toit, Giovanni De Amici, Dong Wu, William Deal
Caitlyn Cooke, Univ. of Colorado
(11:10 - 11:30) 2020-06-24
Abstract
We2C-5: Flexible Radar Front End with Multimodal Transition at 300 GHz
Martin Geiger, Simon Gut, Philipp Hügler, Christian Waldschmidt
Martin Geiger, University of Ulm
(11:30 - 11:50) 2020-06-24
Leo de Vreede
Delft Univ. of Technology
Paul Draxler
MaXentric Technologies, LLC
Location
408B
Abstract

Load modulation based power amplifiers have been the workhorses in wireless networks for more than two decades. In this session, load modulation techniques are further enhanced, for their RF bandwidth, through the use of balanced structures and inverted DPA topologies. In addition, Doherty efficiency is further improved in power back-off by means of digitally controlled signal injection. 5G MIMO base stations needs are addressed including DPA miniaturization through MMIC integration, as well as, the capability to handle large video bandwidths.

Abstract
We2G-1: Dual-Octave-Bandwidth RF-Input Pseudo-Doherty Load Modulated Balanced Amplifier with ≥ 10-dB Power Back-off Range
Yuchen Cao, Kenle Chen
Yuchen Cao, Univ. of Central Florida
(10:10 - 10:30) 2020-06-24
Abstract
We2G-2: Extend High Efficiency Range of Doherty Power Amplifier by Modifying Characteristic Impedance of Transmission Lines in Load Modulation Network
Jingzhou Pang, Yue Li, Chenhao Chu, Jun Peng, Xin Yu ZHOU, Anding Zhu
Jingzhou Pang, Univ. College Dublin
(10:30 - 10:50) 2020-06-24
Abstract
We2G-3: A Fully-Integrated GaN Doherty Power Amplifier Module with a Compact Frequency-Dependent Compensation Circuit for 5G massive MIMO Base Stations
Shuichi Sakata, Katsuya Kato, Eri Teranishi, Takumi Sugitani, Rui Ma, Kevin Chuang, Yu-Chen Wu, Kei Fukunaga, Yuji Komatsuzaki, Kenichi Horiguchi, Koji Yamanaka, Shintaro Shinjo
Shuichi Sakata, Mitsubishi Electric Corp.
(10:50 - 11:10) 2020-06-24
Abstract
We2G-4: 300W Dual Path GaN Doherty Power Amplifier with 65% Efficiency for Cellular Infrastructure Applications
Mir Masood, Srinidhi Embar R, Peter Rashev, John Holt, Steve Kenney
Mir Masood, NXP Semiconductors
(11:10 - 11:30) 2020-06-24
Abstract
We2G-5: Digitally Assisted Load Modulated Balanced Amplifier for 200W Cellular Infrastructure Applications
Srinidhi Embar R, Mir Masood, Tushar Sharma, Joseph Staudinger, Sagar Dhar, Peter Rashev, Geoffrey Tucker, Fadhel Ghannouchi
Srinidhi Embar R, NXP Semiconductors
(11:30 - 11:50) 2020-06-24

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Dietmar Kissinger
Ulm Univ.
William Deal
Northrop Grumman Corp.
Location
403B
Abstract

This short session presents works in distributed mixers, sub-terahertz oscillators, and millimeter-wave true-time delay circuits

Abstract
We3C-1: InP HBT Oscillators Operating up to 682 GHz with Coupled-Line Load for Improved Efficiency and Output Power
Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, Jae Sung Rieh
Jungsoo Kim, Korea Univ.
(15:50 - 16:10) 2020-06-24
Abstract
We3C-2: A DC to 194-GHz Distributed Mixer in 250-nm InP DHBT Technology
Teruo Jyo, Munehiko Nagatani, Minoru Ida, Miwa Mutoh, Hitoshi Wakita, Naoki Terao, Hideyuki Nosaka
Teruo Jyo, NTT Device Technology Laboratories
(16:10 - 16:30) 2020-06-24
Abstract
We3C-3: Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology
Alper Karakuzulu, Mohamed Eissa, Dietmar Kissinger, Andrea Malignaggi
Alper Karakuzulu, IHP Microelectronics
(16:30 - 16:50) 2020-06-24
John Wood
Wolfspeed, A Cree Company
Jonmei Yan
MaXentric Technologies, LLC
Location
408B
Abstract

In this session, we have two papers describing advanced DPD techniques for massive MIMO applications, considering OTA identification and predistorter complexity; and three papers describing novel approaches for envelope tracking power amplifiers, including a GaN MMIC modulator design, a floating source RF PA, and a novel Marx generator-based modulator.

Abstract
We3G-1: Closed-Loop Sign Algorithms for Low-Complexity Digital Predistortion
Vesa Lampu, Lauri Anttila, Alberto Brihuega, Markus Allén, Mikko Valkama
Pablo Pascual Campo, Tampere University
(15:50 - 16:10) 2020-06-24
Abstract
We3G-2: OTA-Based Data Acquisition and Signal Separation for Digital Predistortion of Multi-User MIMO Transmitters in 5G
Xiaoyu Wang, Yue Li, Chao Yu, Wei Hong, Anding Zhu
Xiaoyu Wang, Univ. College Dublin
(16:10 - 16:30) 2020-06-24
Abstract
We3G-3: L-Band Floating-Ground RF Power Amplifier for Reverse-Type Envelope Tracking Systems
Sophie Paul, Wolfgang Heinrich, Olof Bengtsson
Sophie Paul, Ferdinand-Braun-Institut
(16:30 - 16:50) 2020-06-24
Abstract
We3G-4: High Efficiency, High Bandwidth Switch-Mode Envelope Tracking Supply Modulator
Florian Hühn, Felix Müller, Lars Schellhase, Wolfgang Heinrich, Andreas Wentzel
Florian Hühn, Ferdinand-Braun-Institut
(16:50 - 17:10) 2020-06-24
Abstract
We3G-5: Exploiting the Marx Generator as a 100 MHz High-Speed Multilevel Supply Modulator
Peco Gjurovski, Lukas Hüssen, Renato Negra
Peco Gjurovski, RWTH Aachen Univ.
(17:10 - 17:30) 2020-06-24

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Kaushik Sengupta
Princeton Univ.
Joe Qiu
Army Research Office
Location
408B
Abstract

The session will showcase state-of-the-art advancements in silicon-based power amplifier architectures and technology for 5G and automotive applications. The session will demonstrate techniques that range from broadband design and back-off efficiency enhancement to fully digital PA architectures. The first five papers demonstrate these techniques from 22 to 90 GHz and the last paper discusses a novel hybrid digital transmitter architecture combining CMOS and LDMOS technologies for base station applications.

Abstract
Th1G-1: A 28 GHz Linear and Efficient Power Amplifier Supporting Wideband OFDM for 5G in 28nm CMOS
Yen-Wei Chang, Tsung-Ching Tsai, Jie-Ying Zhong, Jeng-Han Tsai, Tian-Wei Huang
Yen-Wei Chang, National Taiwan Univ.
(08:00 - 08:20) 2020-06-25
Abstract
Th1G-2: A Balanced Power Amplifier with Asymmetric Coupled-Line Couplers and Wilkinson Baluns in a 90 nm SiGe BiCMOS Technology
Yunyi Gong, John Cressler
Yunyi Gong, School of Electrical and Computer Engineering
(08:20 - 08:40) 2020-06-25
Abstract
Th1G-3: Load Modulated Balanced mm-Wave CMOS PA with Integrated Linearity Enhancement for 5G applications
Chandrakanth Chappidi, Zheng Liu, Kaushik Sengupta
Tushar Sharma, NXP Semiconductors
(08:40 - 09:00) 2020-06-25
Abstract
Th1G-4: A 22-37 GHz Broadband Compact Linear Mm-Wave Power Amplifier Supporting 64-/256-/512-QAM Modulations for 5G Communications
Fei Wang, Adam Wang, Hua Wang
Fei Wang, Georgia Institute of Technology
(09:00 - 09:10) 2020-06-25
Abstract
Th1G-5: Two W-Band Wideband CMOS mmW PAs for Automotive Radar Transceivers
Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang
Yuting Xue, East China Normal Univ.
(09:10 - 09:20) 2020-06-25
Abstract
Th1G-6: An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
Robert Bootsman, Dieuwert Mul, Yiyu Shen, Rob Heeres, Fred van Rijs, Morteza Alavi, Leo de Vreede
Robert Bootsman, Delft Univ. of Technology
(09:20 - 09:40) 2020-06-25

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Jeremy Dunworth
Qualcomm Research
Donald LaFrance
Lockheed Martin Corp.
Location
408B
Abstract

Presentations within this session include integrated front ends for a wide range of frequencies used in phased arrays. This session will commence with two radar papers, followed by a Ka-band communication front end and an 8-channel K-band phase shifter, and will conclude with a wideband GaN front end.

Abstract
Th2G-1: A Fundamental-Frequency 122 GHz Radar Transceiver with 5.3 dBm Single-Ended Output Power in a 130 nm SiGe Technology
Erick Aguilar, Vadim Issakov, Robert Weigel
Erick Aguilar, Univ. of Erlangen-Nuremberg
(10:10 - 10:30) 2020-06-25
Abstract
Th2G-2: An Integrated Bistatic 4TX/4RX Six-Port MIMO-Transceiver at 60 GHz in a 130-nm SiGe BiCMOS Technology for Radar Applications
Matthias Völkel, Stefan Pechmann, Herman Ng, Dietmar Kissinger, Robert Weigel, Amelie Hagelauer
Matthias Völkel, Friedrich-Alexander-Univ. Erlangen-Nürnberg
(10:30 - 10:50) 2020-06-25
Abstract
Th2G-3: A Power Efficient BiCMOS Ka-Band Transmitter Front-End for SATCOM Phased-Arrays
Soroush Rasti Boroujeni, Aneta Wyrzykowska, Mohammad Hossein Mazaheri, Ardeshir Palizban, Stanley Ituah, Amany El Gouhary, Gouyan Chen, Hossein Gharaei Garakani, Mohammad-Reza Nezhad-Ahmadi, Safieddin Safavi-Naeini
Soroush Rasti Boroujeni, Univ. of Waterloo
(10:50 - 11:10) 2020-06-25
Abstract
Th2G-4: A K-Band Low-Complexity Modular Scalable Wide-Scan Phased Array
Fatemeh Akbar, Amir Mortazawi
Fatemeh Akbar, Univ. of Michigan
(11:10 - 11:30) 2020-06-25
Abstract
Th2G-5: A Compact Ultra-broadband GaN MMIC TR Front-End
lin qian, Haifeng Wu, Liulin Hu, Yijun Chen, Shanji Chen, Xiaoming Zhang
lin qian, Qinghai Nationalities University
(11:30 - 11:50) 2020-06-25

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Sorin Voinnigescu
Univ. of Toronto
Cynthia Hang
Raytheon Company
Location
408B
Abstract

This session covers the key building blocks used in beamformers and phased arrays ranging from novel ultrawideband baluns, multi-bit phase shifters and attenuators, high isolation antenna switches, and large power mm-wave detectors.

Abstract
Th3G-1: A DC-32GHz 7-Bit Passive Attenuator with Capacitive Compensation Bandwidth Extension Technique in 55 nm CMOS
Zijiang Zhang, Nayu Li, Huiyan Gao, Min Li, Shaogang Wang, Yen-Cheng Kuan, Xiaopeng Yu, Zhiwei Xu
Zijiang Zhang, Zhejiang Univ.
(13:40 - 14:00) 2020-06-25
Abstract
Th3G-2: A Low Power 60 GHz 6 V CMOS Peak Detector
Zoltán Tibenszky, Corrado Carta, Frank Ellinger
Zoltán Tibenszky, Technische Univ. Dresden
(14:00 - 14:20) 2020-06-25
Abstract
Th3G-3: A 35 GHz Hybrid π-Network High-Gain Phase Shifter with 360° Continuous Phase Shift Range
Dong Wei, Xuan Ding, Hai Yu, Qun Gu, Zhiwei Xu, Yen-Cheng Kuan, Shunli Ma, Junyan Ren
Dong Wei, Fudan Univ.
(14:20 - 14:40) 2020-06-25
Abstract
Th3G-4: A 68-dB Isolation 1.0-dB Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network
Xi Fu, Yun Wang, Zheng Li, Atsushi Shirane, Kenichi Okada
Xi Fu, Tokyo Institute of Technology
(14:40 - 14:50) 2020-06-25
Abstract
Th3G-5: A CMOS Balun with Common Ground and Artificial Dielectric Compensation Achieving 79.5% Fractional Bandwidth and <2° Phase Imbalance
Geliang Yang, Keping Wang
Rui Chen, Southeast Univ.
(14:50 - 15:00) 2020-06-25
Abstract
Th3G-6: A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process
Chieh-Wei Wang, Yu-Chun Chen, Wen-Jie Lin, Jeng-Han Tsai, Tian-Wei Huang
Chieh-Wei Wang, National Taiwan Univ.
(15:00 - 15:10) 2020-06-25