Active Devices

This session presents low-phase-noise signal generation from 2GHz to 30GHz using a variety of technologies including CMOS, SiGe, and GaN. Several advanced techniques including subharmonic injection, folded resonator, SIW resonator, dual-core/quad-mode, and post-fabrication selection will be discussed.

This session presents advanced frequency conversion circuits using silicon-based and III-V semiconductor technologies. The wide range of topics including frequency multiplication, frequency mixing, and frequency division will be discussed.

Microwave radiometry and low-noise amplifiers from microwave to mm-waves. Broad range of state-of-the-art LNAs including IR-UWB applications to W-band GaN high linearity uses.

This session presents high-efficiency and -linearity power amplifiers modules/MMIC designed in GaN and GaAs compound semiconductors. The papers of the session focus on a wide range of applications moving from communications in NR FR1 up to Ka-band satellite. The topology selected is multistage Doherty architecture and differential topology to achieve high efficiency and linearity over wide bands.

State-of-the-art Ku-band to E-band mm-wave VGAs and phase shifters in CMOS technology. Design methods include novel approaches in optimization and circuit techniques.

This session includes novel techniques to improve the performance of different power amplifier topologies in the 1GHz – 15GHz frequency band. Techniques for both narrow band and broadband will be presented. It will also cover both single- and dual-input power amplifiers for transmitter architectures.

This session reports on recent advances in RF power amplifier linearity and efficiency enhancement techniques.

This session presents >10W load-modulated power amplifiers focusing on broad bandwidth and wide output backoff power ranges. The session begins with a keynote presentation on stability analysis, critical for any high-power design. Examples of both hybrid and MMIC power amplifiers will be discussed.

This session addresses digital signal processing algorithms for wireless transmitter linearization and power amplifier behavioral modeling.

This session focuses on mm-wave power amplifiers operating between Ka-band and E-band. The first paper describes a GaN V/E-band distributed PA with greater than 1W output power. The second paper discusses a V-band GaN PA with low-gain compression for use in communication systems. The third paper presents a Ka-band LNA and PA designed in silicon FinFET technology. The fourth paper describes a high linearity SiGe PA design using a novel balun and power combiner.

This session features discussions of advances in process technology for III-V on Si HBTs, low-loss SOI substrate processing, and GaN-on-Silicon power devices.

This session starts with a keynote presentation on an HF through UHF transceiver overview before moving to a presentation on a reconfigurable low-pass filter. The session continues with a high isolation CMOS switch, a GaN supply modulator and finishes with a keynote presentation on analog predistortion applied to the HF through UHF frequency range.

This session focuses on III-V and silicon power amplifiers (PAs) targeting D-band applications and beyond. It will start with a benchmark design of high-efficiency PAs in 250nm and 130nm InP HBT technologies at 220GHz, followed by a low-noise PA for the WR4.3 and WR3.4 bands in a 35nm InGaAs mHEMT technology. The next presentation from the session will talk about another InGaAs mHEMT PA covering 270–320GHz in a compact footprint. Next, analysis and design of a differential complex neutralization will be discussed, based on which a PA at D-band is implemented for efficient and linear applications. The session will be concluded with a presentation on a 10–230GHz InP distributed amplifier using Darlington quadruple-stacked HBTs.

This session includes papers featuring heterogeneous integration of N-polar GaN HEMTs with Si interposers at Ka-band, high-power-density Ka-band GaN MIS-HEMTs, and thermal characterization and modeling of coupling effects in GaN-based MMICs.