Active Devices

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Amit Jha
Qualcomm
Jahnavi Sharma
Intel
503-504
Abstract

This session presents low phase-noise VCO, frequency synthesis, and novel techniques of ultrafast pulse generation.

Abstract
Tu1D-1: A Low Phase Noise 28GHz VCO Using Transformer-Based Q-Enhanced Active Impedance Converter
Md. Aminul Hoque, Mohammad Chahardori, Mohammad Ali Mokri, Soumen Mohapatra, Dipan Kar, Deukhyoun Heo
Washington State Univ., Washington State Univ., Washington State Univ., Washington State Univ., Washington State Univ., Washington State Univ.
(08:00 - 08:20)
Abstract
Tu1D-2: A Picosecond Ultrafast Pulse Generation Featuring Switchable Operation Between Monocycle and Doublet Pulses
MuhibUr Rahman, Ke Wu
Polytechnique Montréal, Polytechnique Montréal
(08:20 - 08:40)
Abstract
Tu1D-3: A W-Band Wide Locking Range Divide-by-Three Injection-Locked Frequency Divider in 40nm CMOS
Wei-Cheng Chang, Ho-Chun Chang, Fei-Ching Chang, Jenny Yi-Chun Liu
National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ.
(08:40 - 09:00)
Abstract
Tu1D-4: A Hybrid Pulling Mitigation Synthesizer for NB-IoT Transmitter
Nagarajan Mahalingam, Hang Liu, Yisheng Wang, Kiat Seng Yeo, Chien-I Chou, Hung-Yu Tsai, Kun-Hsun Liao, Wen-Shan Wang, Ka-Un Chan, Ying-Hsi Lin
SUTD, SUTD, SUTD, SUTD, Realtek Semiconductor, Realtek Semiconductor, Realtek Semiconductor, Realtek Semiconductor, Realtek Semiconductor, Realtek Semiconductor
(09:00 - 09:20)
Abstract
Tu1D-5: An Approach for Compensating Reciprocal Mixing and Close-In Phase Noise Distortion
Won Namgoong
SUNY Albany
(09:20 - 09:40)

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Austin Chen
Peraso, Inc.
Stephen Maas
Nonlinear Technologies
503-504
Abstract

This session presents various building blocks for mm-wave phased-array systems such as mixers, phase shifters, and switches using silicon-based and III-V compound semiconductor technologies.

Abstract
Tu2D-1: A 1-170-GHz Distributed Down-Converter MMIC in a 35-nm Gate-Length InGaAs mHEMT Technology
Fabian Thome, Sandrine Wagner, Arnulf Leuther
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(10:10 - 10:30)
Abstract
Tu2D-2: A 27–57GHz Down-Conversion Mixer with Bulk Injection Technique
Qianyi Dong, Liang Qiu, Shengjie Wang, Huiyan Gao, Kailong Zhao, Zhonglan Qian, Jiangbo Chen, Yen-Cheng Kuan, Qun Jane Gu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., NYCU, Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ.
(10:30 - 10:50)
Abstract
Tu2D-3: An E-Band Subradix Active Phase Shifter with <0.69° RMS Phase Error and 16dB Attenuation in 28nm CMOS
Kailong Zhao, Liang Qiu, Jiangbo Chen, Qianyi Dong, Yen-Cheng Kuan, Qun Jane Gu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., NYCU, Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ.
(10:50 - 11:10)
Abstract
Tu2D-4: A DC–50GHz DPDT Switch with >27dBm IP1dB in 45nm CMOS SOI
Yuqi Liu, Jeongsoo Park, Hua Wang
Georgia Tech, Georgia Tech, Georgia Tech
(11:10 - 11:30)
Abstract
Tu2D-5: Compact, High-Isolation 110–140GHz SPST and SPDT Switches Using a 250nm InP HBT Process
Jeff Shih-Chieh Chien, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(11:30 - 11:50)

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Marc Franco
Qorvo
Robert H. Caverly
Villanova Univ.
503-504
Abstract

This session presents the latest developments in technology for the HF, VHF, and UHF bands. It includes a 5kW RF power transistor, synthesis of broadband networks for high-efficiency power amplifiers, a GaN-FET class-D power amplifier for space-based radar, and a UHF outphasing system. It also includes an HF-VHF ice-penetrating radar and an all-analog VHF receiver.

Abstract
Tu3D-1: A 5 kW, 110V GaN on SiC Transistor for L Band Pulsed Applications
James Custer, Gabriele Formicone, Jeff Burger, John Walker
Integra Technologies, Integra Technologies, Integra Technologies, Integra Technologies
(13:30 - 13:50)
Abstract
Tu3D-2: Synthesis of Broadband Differential Loading Networks for High-Efficiency Power Amplifiers
Ramon A. Beltran
Ophir RF
(13:50 - 14:10)
Abstract
Tu3D-3: A GaN HF-Band Power Amplifier Using Class-D Topology for Jupiter Ice Penetrating Radar
Tushar Shenoy, Robert Johnson, Jordan Tanabe, Robert Beauchamp, Ly Yam, Yonggyu Gim, Donald Heyer, Jeffery Plaut
Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab
(14:10 - 14:30)
Abstract
Tu3D-4: Design of an HF-VHF Ice Penetrating Synthetic Aperture Radar
Jonathan D. Hawkins, Paul V. Brennan, Keith W. Nicholls, Lai Bun Lok
Univ. College London, Univ. College London, British Antarctic Survey, Univ. College London
(14:30 - 14:40)
Abstract
Tu3D-5: Analog VHF IQ Receiver with Low IF
Richard Campbell, Katlin Dahn
Portland State Univ., Portland State Univ.
(14:40 - 14:50)
Abstract
Tu3D-6: 200W Outphasing Amplifier System for 650MHz
Frederick H. Raab
Green Mountain Radio Research
(14:50 - 15:10)

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Srinivasan Gopal
Broadcom Corp.
Hermann Boss
Rohde & Schwarz
503-504
Abstract

This session focuses on high-bandwidth digital signal drivers, transimpedance amplifiers and PRBS generators for optical and radar applications. It is comprised of two optical communication ICs, which include a 108GHz bandwidth high-swing PAM-4 multiplexer driver IC and a 60Gbps variable transimpedance amplifier. In addition, a power-efficient mm-wave 33Gbps PRBS generator for PMCW radar is introduced.

Abstract
Tu4D-1: 160-GSa/s-and-beyond 108-GHz-bandwidth over-2-Vppd output-swing 0.5-μm InP DHBT 2:1 AMUX-driver for next generation optical communications
Romain Hersent, Agnieszka Konczykowska, Filipe Jorge, Fabrice Blache, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jérémie Renaudier
III-V Lab, III-V Lab, III-V Lab, III-V Lab, III-V Lab, III-V Lab, III-V Lab, Nokia Bell Labs
(15:40 - 16:00)
Abstract
Tu4D-2: An Energy-Efficient, 60Gbps Variable Transimpedance Optical Receiver in a 90nm SiGe HBT Technology
Luis A. Valenzuela, Ghazal Movaghar, James Dalton, Navid Hosseinzadeh, Hector Andrade, Aaron Maharry, Clint L. Schow, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(16:00 - 16:20)
Abstract
Tu4D-3: An Area Efficient Low-Power mmWave PRBS Generator in FDSOI
Florian Probst, Andre Engelmann, Marco Dietz, Vadim Issakov, Robert Weigel
FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, Technische Univ. Braunschweig, FAU Erlangen-Nürnberg
(16:20 - 16:40)

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Nestor Lopez
MIT Lincoln Laboratory
Michael Roberg
Qorvo
1A - 1C
Abstract

This session includes papers discussing recent advancements with load modulated and wideband amplifiers. A new switchless Class-G power amplifier technique is introduced in the first paper, followed by an investigation of input nonlinearity impacts on LMBA performance in the second paper. The third paper discusses a LMBA architecture exploiting the analog/digital transistor duality for performance enhancement. The fourth paper presents a 17.3–20.2GHz multi-stage 14W Doherty power amplifier MMIC. The session concludes with a paper discussing a 50W 1–6GHz CW power amplifier module.

Abstract
We1E-1: A 700–2800MHz Switchless Class-G Power Amplifier with Two-Quadrant Modulation for Back-Off Efficiency Improvement
Xiaofan Chen, Ming Zhao, Wenhua Chen, Zhenghe Feng
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(08:00 - 08:20)
Abstract
We1E-2: Investigation of Input Nonlinearity in Sequential Load Modulated Balanced Amplifiers
Chenhao Chu, Tushar Sharma, Sagar K. Dhar, Ramzi Darraji, Anding Zhu
Univ. College Dublin, Renesas Electronics, Renesas Electronics, Ericsson, Univ. College Dublin
(08:20 - 08:40)
Abstract
We1E-3: Intrinsically Mode-Reconfigurable Load-Modulation Power Amplifier Leveraging Transistor’s Analog-Digital Duality
Niteesh Bharadwaj Vangipurapu, Haifeng Lyu, Yuchen Cao, Kenle Chen
Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida, Univ. of Central Florida
(08:40 - 09:00)
Abstract
We1E-4: A 17.3–20.3GHz Doherty Power Amplifier with 14W Saturated Output Power and 28% PAE at 6dB OPBO in 150nm GaN Technology
E. Richard, T. Huet, H. Moula Karimdjy, M. Camiade, C. Chang, V. Serru, F. Fernandez, J. Suedois, I. Davies, V. Valenta
UMS, UMS, UMS, UMS, UMS, UMS, Thales, Thales, ESA-ESTEC, ESA-ESTEC
(09:00 - 09:20)
Abstract
We1E-5: A 50W CW 1–6GHz GaN MMIC Power Amplifier Module with Greater Than 30% Power Added Efficiency
Michael Roberg, Jason Zhang, Robert Flynt, Matthew Irvine
Qorvo, Qorvo, Qorvo, Qorvo
(09:20 - 09:40)
Taiyun Chi
Rice Univ.
Joe Qiu
U.S. ARMY Research Office
4D-4F
Abstract

This session presents new research on power amplifiers and front-end modules in silicon and III-V technologies with state-of-the-art power and efficiency performance. It covers topics such as dual-band PA operation at 36/64GHz, high-efficiency D and G-band PAs and GaN-on-Si single-chip frontends in the Ka-band.

Abstract
We1G-1: A Compact SiGe Stacked Common-Base Dual-band PA with20/18.8dBm Psat at 36/64 GHz Supporting Concurrent Modulation
Zheng Liu, Emir Ali Karahan, Kaushik Sengupta
Princeton Univ., Princeton Universiy, Princeton Univ.
(08:00 - 08:20)
Abstract
We1G-2: A 150–175GHz 30dB S21 G-Band Power Amplifier with 0.25W Pout and 15.7% PAE in a 250nm InP HBT Technology
Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran
Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging, Teledyne Scientific & Imaging
(08:20 - 08:40)
Abstract
We1G-3: A 2-Stage, 140GHz Class-B Power Amplifier Achieving 22.5% PAE at 17.3dBm in a 250nm InP HBT Technology
Eythan Lam, Kang Ning, Ahmed Ahmed, Mark Rodwell, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(08:40 - 09:00)
Abstract
We1G-4: A Compact, 114GHz, High-Efficiency Power Amplifier in a 250nm InP HBT Process
Jeff Shih-Chieh Chien, James F. Buckwalter
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(09:00 - 09:20)
Abstract
We1G-5: GaN-on-Si Ka-Band Single-Chip Front-End MMIC for Earth Observation Payloads
Patrick Ettore Longhi, Ferdinando Costanzo, Lorenzo Pace, Walter Ciccognani, Sergio Colangeli, Rocco Giofrè, Rémy Leblanc, Fabio Vitobello, Ernesto Limiti
Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, Università di Roma “Tor Vergata”, OMMIC, REA, Università di Roma “Tor Vergata”
(09:20 - 09:40)

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Anding Zhu
Univ. College Dublin
Pere L. Gilabert
Univ. Politècnica de Catalunya
1A - 1C
Abstract

Advanced analog and digital linearization and modeling techniques for power amplifiers and wideband transmitter systems will be presented. Paper topics include: load-modulated IMD cancellation for mm-wave PAs; load mismatch tracking for DPD of mobile transmitters; mixture-of-experts neural network modeling of PAs; piecewise DPD method for Wideband 5G applications; and IM-based calibration for MIMO 5G transmitters.

Abstract
We2E-1: Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM<1.2%
Masoud Pashaeifar, Leo de Vreede, Morteza Alavi
Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology
(10:10 - 10:30)
Abstract
We2E-2: Load-Mismatch Tracking Digital Predistortion for Mobile-Terminal Power Amplifiers
Xin Liu, Wenhua Chen, Wenhao Chen, Yan Guo, Zhenghe Feng
Tsinghua Univ., Tsinghua Univ., Huawei Technologies, Huawei Technologies, Tsinghua Univ.
(10:30 - 10:50)
Abstract
We2E-3: Mixture of Experts Neural Network for Modeling of Power Amplifiers
Arne Fischer-Bühner, Alberto Brihuega, Lauri Anttila, Manil Dev Gomony, Mikko Valkama
Nokia Bell Labs, Nokia, Tampere Univ., Nokia Bell Labs, Tampere Univ.
(10:50 - 11:10)
Abstract
We2E-4: Hardware-Efficient Implementation of Piece-Wise Digital Predistorters for Wideband 5G Transmitters
Mohammed Almoneer, Hoda Barkhordar-pour, Patrick Mitran, Slim Boumaiza
Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo, Univ. of Waterloo
(11:10 - 11:30)
Abstract
We2E-5: An Intermodulation Distortion Oriented 256-Element Phased-Array Calibration for 5G Base Station
Yuuichi Aoki, Yonghoon Kim, Yongan Hwang, Heedo Kang, Sunryoul Kim, An-Sang Ryu, Sung-Gi Yang
Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung
(11:30 - 11:50)
William R. Deal
Northrop Grumman
Wooram Lee
Penn State University
4D-4F
Abstract

mm-Wave and Terahertz technology is rapidly advancing, with significant advances being made in fundamental integrated circuits and components. This session focuses on system concepts and demonstrations, including high frequency communications links, imaging, and spectroscopy using sub-mm-wave radar.

Abstract
We2G-1: A 140GHz CMOS RFSOI Transmit-Receive Phased-Array Wireless Link with 11–12Gbps and 16 and 64-QAM Operation
Siwei Li, Gabriel M. Rebeiz
Univ. of California, San Diego, Univ. of California, San Diego
(10:10 - 10:30)
Abstract
We2G-2: A W-Band, 92–114GHz, Real-Time Spectral Efficient Radio Link Demonstrating 10Gbps Peak Rate in Field Trial
Mikael Hörberg, Bengt Madeberg, Daniel Sjöberg, Herbert Zirath, Konstantinos Bitsikas, Konstantinos Kravariotis, Spiros Tsapalis, Marcus Gavell, Göran Granström, Rickard Lövblom, Dimitris Siomos, Sam Agneessens, Jonas Hansryd
Ericsson, Ericsson, Ericsson, Ericsson, Ericsson, Ericsson, Ericsson, Gotmic, Gotmic, Gotmic, OTE Group, Ericsson, Ericsson
(10:30 - 10:50)
Abstract
We2G-3: A 100GHz Fully Integrated FMCW Imaging Radar in 110nm CMOS with Fundamental Oscillation Above fmax/2 for Drywall Inspection
Morteza Tavakoli Taba, S.M. Hossein Naghavi, Mohammed Aseeri, Ehsan Afshari
Univ. of Michigan, Univ. of Michigan, KACST, Univ. of Michigan
(10:50 - 11:10)
Abstract
We2G-4: Measuring the 557GHz Water Vapor Absorption Line with Radar Speckle Averaging
Ken B. Cooper, Brian J. Drouin, Omkar Pradhan, Jose V. Siles, Raquel Rodriguez Monje, Deacon J. Nemchick, Robert J. Dengler, Leslie K. Tamppari
Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab, Jet Propulsion Lab
(11:10 - 11:30)
Abstract
We2G-5: 60Gbps 108GHz 16-QAM Dielectric Waveguide Interconnect with Package Integrated Filters
Georgios C. Dogiamis, Thomas W. Brown, Neelam Prabhu Gaunkar, Ye Seul Nam, Triveni S. Rane, Surej Ravikumar, Vijaya B. Neeli, Jessica C. Chou, Said Rami
Intel, Intel, Intel, Intel, Intel, Intel, Intel, Intel, Intel
(11:30 - 11:50)

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Pekka Kangaslahti
Jet Propulsion Lab
Roee Ben-Yishay
Intel
503-504
Abstract

This session includes highly linear receivers and amplifiers for applications above 75GHz. Low noise amplifier in GaN technology achieves high linearity up to F-band frequency range while linearized CMOS receiver improves the performance of automotive radars. Furthermore G-band receiver and D-band LNA demonstrate state-of-the-art results in silicon technologies.

Abstract
We3D-1: A W/F-Band Low-Noise Power Amplifier GaN MMIC with 3.5–5.5-dB Noise Figure and 22.8–24.3-dBm Pout
Fabian Thome, Peter Brückner, Stefano Leone, Rüdiger Quay
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
(13:30 - 13:50)
Abstract
We3D-2: A Flip-Chip 180GHz Receiver in 40nm CMOS
Hong-Shen Chen, Yu-Lun Hu, Wei-Cheng Chang, Jenny Yi-Chun Liu
National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ., National Tsing Hua Univ.
(13:50 - 14:10)
Abstract
We3D-3: A Fully-Differential 146.6–157.4GHz LNA Utilizing Back Gate Control to Adjust Gain in 22nm FDSOI
Patrick J. Artz, Philipp Scholz, Thomas Mausolf, Friedel Gerfers
Technische Universität Berlin, Technische Universität Berlin, IHP, Technische Universität Berlin
(14:10 - 14:30)
Abstract
We3D-4: Experimental Characterization of Temperature-Dependent Microwave Noise of Discrete HEMTs: Drain Noise and Real-Space Transfer
Bekari Gabritchidze, Kieran Cleary, Jacob Kooi, Iretomiwa Esho, Anthony C. Readhead, Austin J. Minnich
Caltech, Caltech, Jet Propulsion Lab, Caltech, Caltech, Caltech
(14:30 - 14:50)
Richard Al Hadi
Alcatera
Ahmed Gadallah
IHP
4D-4F
Abstract

This session presents the latest research on frequency generation circuits in the mm-wave and terahertz range. It covers topics including THz frequency doublers, frequency multipliers, super-regenerative oscillators, closed-loop IQ correction and coherent 1D THz arrays.

Abstract
We3G-1: A 237–263GHz CMOS Frequency Doubler with 0.9dBm Output Power and 2.87% Power Efficiency Based on Harmonic Matched Gmax-Core
Byeong-Taek Moon, Byeonghun Yun, Sang-Gug Lee
KAIST, KAIST, KAIST
(13:30 - 13:50)
Abstract
We3G-2: A 250–300GHz Frequency Multiplier-by-8 Chain in SiGe Technology
Ahmed Gadallah, Mohamed H. Eissa, Thomas Mausolf, Dietmar Kissinger, Andrea Malignaggi
IHP, IHP, IHP, Universität Ulm, IHP
(13:50 - 14:10)
Abstract
We3G-3: 61.5GHz Energy-Efficient Super-Regenerative Oscillator with Tunable Quench Duty Cycle
Ali Ferschischi, Hatem Ghaleb, Corrado Carta, Frank Ellinger
Technische Universität Dresden, Technische Universität Dresden, Technische Universität Dresden, Technische Universität Dresden
(14:10 - 14:30)
Abstract
We3G-4: 15 to 72GHz Closed-Loop Impairment Corrected mm-Wave Delay-Locked IQ Modulator for 5G Applications
Isaac Martinez
Keysight Technologies
(14:30 - 14:50)
Abstract
We3G-5: A Coherent 233–243GHz Scalable 1D Array in 28nm Bulk CMOS Using Sub-Harmonic Inter-Element Leakage
Sumeet Londhe, Eran Socher
Tel Aviv University, Tel Aviv University
(14:50 - 15:10)

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Shirin Montazeri
Google
Edward Niehenke
Niehenke Consulting
503-504
Abstract

This session is focused on the latest developments in design and implementation of low power CMOS low noise amplifiers for various applications ranging from phased-array receivers to cryogenic applications. The papers in this session cover frequency ranges as low as 2GHz up to 80GHz. Various novel circuit techniques and device models are reported to achieve low power dissipation and low noise performance.

Abstract
We4D-1: A 3.2mW 2.2–13.2GHz CMOS Differential Common-Gate LNA for Ultra-Wideband Receivers
Li Zhang, Nguyen L.K. Nguyen, Jingjun Chen, Omeed Momeni, Xiaoguang Liu
Univ. of California, Davis, Univ. of California, Davis, Univ. of California, Davis, Univ. of California, Davis, SUSTech
(15:40 - 16:00)
Abstract
We4D-2: Design and Implementation of a 3.9-to-5.3GHz 65nm Cryo-CMOS LNA with an Average Noise Temperature of 10.2K
Sayan Das, Sanjay Raman, Joseph C. Bardin
UMass Amherst, UMass Amherst, Univ. of Massachusetts, Amherst
(16:00 - 16:20)
Abstract
We4D-3: Sub-mW 30GHz Variable-Gain LNA in 22nm FDSOI CMOS for Low-Power Tapered mm-Wave 5G/6G Phased-Array Receivers
Michele Spasaro, Domenico Zito
Aarhus Univ., Aarhus Univ.
(16:20 - 16:40)
Abstract
We4D-4: An Ultra-Low Power E-band Low Noise Amplifier with Three Stacked Current Sharing Amplification Stages in 28-nm CMOS
Liang Qiu, Jiabing Liu, Qianyi Dong, Zhihao Lv, Kailong Zhao, Shengjie Wang, Yen-Cheng Kuan, Q. Jane Gu, Xiaopeng Yu, Chunyi Song, Zhiwei Xu
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., National Chiao Tung Univ., Univ. of California, Davis, Zhejiang Univ., Zhejiang Univ., Zhejiang Univ.
(16:40 - 17:00)
Theodore Reck
Virginia Diodes
Lei Liu
Univ. of Notre Dame
4D-4F
Abstract

This session provides state of the art results for microwave integrated circuits and components. The session includes latest results on sub-mm-wave low noise amplifiers, as well as mm-wave phase shifter, mixer and attenuators in both CMOS and compound semiconductor technologies.

Abstract
We4G-1: High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology
Laurenz John, Axel Tessmann, Arnulf Leuther, Thomas Merkle, Hermann Massler, Sebastien Chartier
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
(15:40 - 16:00)
Abstract
We4G-2: Wideband Switchable-Capacitor Loaded Differential Phase Shifter with Lattice Structures
Sungwon Kwon, Minjae Jung, Byung-Wook Min
Yonsei Univ., Univ. of California, San Diego, Yonsei Univ.
(16:00 - 16:20)
Abstract
We4G-3: A New 77GHz Sampling Mixer in 28nm FD-SOI CMOS Technology for Automotive Radar Application
Alexandre Flete, Christophe Viallon, Philippe Cathelin, Thierry Parra
STMicroelectronics, LAAS-CNRS, STMicroelectronics, LAAS-CNRS
(16:20 - 16:40)
Abstract
We4G-4: A 190-to-220GHz 4-Bit Passive Attenuator with 1.4dB Insertion Loss and Sub-0.4dB RMS Amplitude Error Using Magnetically Switchable Coupled-Lines in 0.13µm CMOS Technology
Nengxu Zhu, Fanyi Meng
Tianjin Univ., Tianjin Univ.
(16:40 - 17:00)

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Mona Jarrahi
Univ. of California, Los Angeles
David Harame
SUNY Polytechnic Institute
501-502
Abstract

This session presents recent advancements in photonics-enabled terahertz emitters and communication systems as well as microwave spectrometry systems.

Abstract
Th1C-1: Terahertz Generation from a Bias-Free, Telecommunication-Compatible Photoconductive Emitter Realized on a Silicon Substrate
Ping-Keng Lu, Yifan Zhao, Deniz Turan, Xinghe Jiang, Mona Jarrahi
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(08:00 - 08:20)
Abstract
Th1C-2: 860µW Terahertz Power Generation from Graded Composition InGaAs Photoconductive Nanoantennas
Ping-Keng Lu, Deniz Turan, Mona Jarrahi
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(08:20 - 08:40)
Abstract
Th1C-3: Fiber-Optic THz Wireless Uplink with Remote Down-Conversion by Optical Carriers Transmitted from Central Office
Sungmin Cho, Sang-Rok Moon, Minkyu Sung, Seung-Hyun Cho, Ho-Jin Song
POSTECH, ETRI, ETRI, ETRI, POSTECH
(08:40 - 09:00)
Abstract
Th1C-4: Photonic-Enabled Real-Time Spectrogram Analysis of Sub-Nanosecond Microwave Events Over a 40GHz Instantaneous Bandwidth
Connor M.L. Rowe, Benjamin Crockett, José Azaña
INRS-EMT, INRS-EMT, INRS-EMT
(09:00 - 09:20)
Abstract
Th1C-5: A Large Signal Equivalent Circuit Modeling and Enhanced RF Output Power of PIN Photodiodes
Jiachao Li, Fei You, Mingming Ma, Ce Shen, Yu Wang, Yin Chen, Chenlin He, Xinyi Zhang, Songbai He
UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC
(09:20 - 09:40)
Charles F. Campbell
Qorvo
Zoya Popović
University of Colorado Boulder
1A - 1C
Abstract

This session addresses power amplifiers fabricated with various compound semiconductor technologies covering a wide frequency range. Several broadband PAs from C to Ka band are detailed, and high-power hundred-watt level mm-wave combining of MMICs shown in Ka and W band.

Abstract
Th1E-1: A DC–170GHz InP Distributed Amplifier Using Transmission Line Loss Compensation Technique
Phat T. Nguyen, Nguyen L.K. Nguyen, Alexander N. Stameroff, Anh-Vu Pham
Univ. of California, Davis, Univ. of California, Davis, Keysight Technologies, Univ. of California, Davis
(08:00 - 08:20)
Abstract
Th1E-2: A Ku/K/Ka-Band GaAs MMIC Load-Modulated Amplifier with a Negative Group Delay Output Network
Nicholas Mullins, Yaniel Vega, Timothy Sonnenberg, Zoya Popović
University of Colorado Boulder, L3Harris, University of Colorado Boulder, University of Colorado Boulder
(08:20 - 08:40)
Abstract
Th1E-3: 2.8–3.8GHz Broadband InGaP/GaAs HBT Doherty Power Amplifier IC for 5G New Radio Handset
Hansik Oh, Woojin Choi, Hyungmo Koo, Jaekyung Shin, Yifei Chen, Hyeongjin Jeon, Youngchan Choi, Hoseok Jung, Jiwon Hwang, Youngoo Yang
Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ., Sungkyunkwan Univ.
(08:40 - 09:00)
Abstract
Th1E-4: Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers
Philipp Neininger, Laurenz John, Martin Zink, Dirk Meder, Michael Kuri, Axel Tessmann, Christian Friesicke, Michael Mikulla, Rüdiger Quay, Thomas Zwick
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Karlsruhe Institute of Technology
(09:00 - 09:20)
Abstract
Th1E-5: A 100W W-Band GaN SSPA
Jason Soric, Nicholas Kolias, Jeffrey Saunders, Jeffrey Kotce, Andrew Brown, Christopher Rodenbeck, Ronald Gyurcsik
Raytheon Company, Raytheon Technologies, Raytheon Technologies, Raytheon Technologies, Raytheon Technologies, U.S. Naval Research Laboratory, Raytheon Technologies
(09:20 - 09:40)

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Luca Pierantoni
Università Politecnica delle Marche
Davide Mencarelli
Università Politecnica delle Marche
501-502
Abstract

This session presents nano-scale devices based on nanomaterials for microwave/THz applications including spatially resolved considerations. A view to some key applications of nano-devices reveals their high potential in terms of sub-nanosecond switching/phase-shifting, low power consumption and low-voltage actuation.

Abstract
Th2C-1: 28nm Neck Width Graphene Geometric Diode for THz Harvesting
Heng Wang, Atif Shamim
KAUST, KAUST
(10:10 - 10:30)
Abstract
Th2C-2: Self-Consistent and Full-Wave Analysis of Carbon-Nanotube Matrices for Multi-Channel Charge Confinement
Davide Mencarelli, Gian Marco Zampa, Christopher Hardly Joseph, Luca Pierantoni
Università Politecnica delle Marche, Università Politecnica delle Marche, Università Politecnica delle Marche, Università Politecnica delle Marche
(10:30 - 10:50)
Abstract
Th2C-3: Towards 500GHz Non-Volatile Monolayer 6G Switches
Myungsoo Kim, Guillaume Docournau, Simon Skrzypczak, Pascal Szriftgiser, Sung Jin Yang, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande
UNIST, IEMN (UMR 8520), IEMN (UMR 8520), PhLAM (UMR 8523), Univ. of Texas at Austin, Technion, Technion, IEMN (UMR 8520), Technion, IEMN (UMR 8520), Univ. of Texas at Austin
(10:50 - 11:10)
Abstract
Th2C-4: Inverted Scanning Microwave Microscopy of a Vital Mitochondrion in Liquid
Afifa Azman, Gianluca Fabi, Eleonora Pavoni, Christopher Joseph, Niccolo Pini, Tiziana Pietrangelo, Luca Pierantoni, Antonio Morini, Davide Mencarelli, Andrea Di Donato, James Hwang, Marco Farina
Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Università “G. D’Annunzio”, Università “G. D’Annunzio”, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, Cornell Univ., Univ. Politecnica delle Marche
(11:10 - 11:30)
Abstract
Th2C-5: Integrated CNT Aerogel Absorbers for Sub-THz Waveguide Systems
Piotr A. Dróżdż, James Campion, Nikolaos Xenidis, Akelsandra Krajewska, Aleksandra Przewłoka, Serguei Smirnov, Maciej Haras, Albert Nasibulin, Dmitri V. Lioubtchenko
Polish Academy of Sciences, KTH, KTH, Polish Academy of Sciences, Polish Academy of Sciences, KTH, Polish Academy of Sciences, Aalto Univ., Polish Academy of Sciences
(11:30 - 11:50)
Tony G. Ivanov
U.S. Army Research Laboratory
Julio Costa
GLOBALFOUNDRIES
1A - 1C
Abstract

This session presents state-of-the-art results across a range of semiconductor technologies of importance for microwave systems. Spanning Diamond, GaN-on-Si, GaN-on-SiC and SiGe, device results and implications for system performance are presented.

Abstract
Th2E-1: Time Dependence of RF Losses in GaN-on-Si Substrates
Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin
Université Catholique de Louvain, IMEC, IMEC, Université Catholique de Louvain, Université Catholique de Louvain, IMEC, IMEC, Université Catholique de Louvain
(10:10 - 10:30)
Abstract
Th2E-2: Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(10:30 - 10:50)
Abstract
Th2E-3: On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs
Sascha Krause, Christos Zervos, Petros Beleniotis, Dan Ritter, Matthias Rudolph, Wolfgang Heinrich
FBH, Technion, Brandenburgische Technische Universität, Technion, Brandenburgische Technische Universität, FBH
(10:50 - 11:10)
Abstract
Th2E-4: Diamond Schottky p-i-n Diodes: DC, Small-Signal and Large-Signal Behavior for RF Applications
Vishal Jha, Harshad Surdi, Franz Koeck, Robert J. Nemanich, Stephen M. Goodnick, Trevor J. Thornton
Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ.
(11:10 - 11:30)
Abstract
Th2E-5: Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System
Christoph Weimer, Eren Vardarli, Gerhard G. Fischer, Michael Schröter
Technische Universität Dresden, Technische Universität Dresden, IHP, Technische Universität Dresden
(11:30 - 11:50)

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Mark P. van der Heijden
NXP Semiconductors
Irfan Ashiq
National Instruments
501-502
Abstract

This session presents advances in high power and high-efficiency PA architectures, incorporating full digital transmitter techniques. The session includes a reconfigurable dual-band NB-IoT transmitter as well as two wideband Doherty PA based transmitters.

Abstract
Th3C-1: A Large Dynamic Range Reconfigurable Interpolation Digital Transmitter for NB-IoT Applications
Nagarajan Mahalingam, Hang Liu, Yisheng Wang, Kiat Seng Yeo, Chien-I Chou, Hung-Yu Tsai, Kun-Hsun Liao, Wen-Shan Wang, Ka-Un Chan, Ying-Hsi Lin
Singapore University of Technology and Design, Singapore University of Technology and Design, Singapore University of Technology and Design, Singapore University of Technology and Design, Realtek Semiconductor Corp., Realtek Semiconductor Corp., Realtek Semiconductor Corp., Realtek Semiconductor Corp., Realtek Semiconductor Corp., Realtek Semiconductor Corp.
(13:30 - 13:50)
Abstract
Th3C-2: A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
Mohammadreza Beikmirza, Yiyu Shen, Leo C.N. de Vreede, Morteza S. Alavi
Technische Universiteit Delft, Technische Universiteit Delft, Technische Universiteit Delft, Technische Universiteit Delft
(13:50 - 14:10)
Abstract
Th3C-3: A 39W Fully Digital Wideband Inverted Doherty Transmitter
Robert Bootsman, Yiyu Shen, Dieuwert Mul, Mohadig Rousstia, Rob Heeres, Fred van Rijs, John Gajadharsing, Morteza S. Alavi, Leo C.N. de Vreede
Technische Universiteit Delft, Technische Universiteit Delft, Technische Universiteit Delft, Ampleon, Ampleon, Ampleon, Ampleon, Technische Universiteit Delft, Technische Universiteit Delft
(14:10 - 14:30)
Jonathan P. Comeau
Anokiwave
Byung-Wook Min
Yonsei Univ.
1D-1F
Abstract

This session will cover novel advancements in integrated transceivers for beamformers and RADAR applications. It covers state-of-the-art examples from K-band to W-band frequencies using innovations in circuits, systems, and integration. The session starts with a 28GHz CMOS butler matrix based on a phase inverting switch for dual-polarization excitation. The next paper presents a state-of-the-art practical demonstration of a beamformer based on GaAs and CMOS technologies. A novel remote sensing of snow and ice at Ku band is presented next. The session ends with a 94GHz FMCW RADAR transceiver in 65nm CMOS.

Abstract
Th3F-1: A 28GHz Butler Matrix Based Switched Beam-Forming Network with Phase Inverting Switch for Dual-Port Excitation in 28nm CMOS
Youngjoo Lee, Bosung Suh, Byung-Wook Min
Yonsei Univ., Samsung, Yonsei Univ.
(13:30 - 13:50)
Abstract
Th3F-2: A 1.9dB NF K-Band Temperature-Healing Phased-Array Receiver Employing Hybrid Packaged 65nm CMOS Beamformer and 0.1µm GaAs LNAs
Dixian Zhao, Peng Gu, Jiajun Zhang, Yongran Yi, Mengru Yang, Chenyu Xu, Yuan Chai, Huiqi Liu, Pingyang He, Na Peng, Liangliang Liu, Xiangxi Yan, Xiaohu You
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Chengdu Xphased Technology Company Ltd., Chengdu Xphased Technology Company Ltd., Chengdu Xphased Technology Company Ltd., Chengdu Xphased Technology Company Ltd., Purple Mountain Laboratories, Purple Mountain Laboratories, Southeast Univ.
(13:50 - 14:10)
Abstract
Th3F-3: A Fully-Integrated CMOS System-on-Chip Ku Band Radiometer System for Remote Sensing of Snow and Ice
Adrian Tang, Yanghyo Kim, M.-C. Frank Chang
Univ. of California, Los Angeles, Stevens Institute of Technology, Jet Propulsion Lab
(14:10 - 14:30)
Abstract
Th3F-4: A 94GHz FMCW Radar Transceiver with 17dBm Output Power and 6.25dB NF in 65nm CMOS
Zelin Song, Yiming Yu, Chenxi Zhao, Xu Zhang, Jiahong Zhu, Jiawei Guo, Huihua Liu, Yunqiu Wu, Kai Kang
UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC, UESTC
(14:30 - 14:50)